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MASKLESS LITHOGRAPHY SYSTEM/¸¶½ºÅ©¸®½º ¸®¼Ò±×·¡ÇÇ POLOS Beam Laser Writer 
   
MASKLESS LITHOGRAPHY SYSTEM, POLOS Beam Laser Writer(ºö ·¹ÀÌÀú¶óÀÌÅÍ)
   
   

POLOS Beam Laser Writer is a maskless lithography equipment for rapid-prototyping,
(Polos ¸¶½ºÅ©¸®½º ¸®¼Ò±×·¡ÇÇ ½Ã½ºÅÛ, ºü¸¥ ÇÁ·ÎÅä ŸÀÔ Á¦ÀÛ °¡´É)

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compatible with a wide range of resists and substrates.

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Our system can produce any 2D shapes at micron resolution without the need for a hard-mask.
- ÇÏµå ¸¶½ºÅ© Á¦ÀÛ ¾øÀÌ ¸¶ÀÌÅ©·Ð ´ÜÀ§ÀÇ ³ë±¤ °¡´É

2ÃÊ À̳»¿¡ ¾²±â Çʵ带 ³ëÃâÇϸ鼭 ¼­ºê¸¶ÀÌÅ©·Ð ºÐÇØ´É:800nano meter

¸î ºÐ ¾È¿¡ ¿Ï¼ºµÈ ´ÙÃþ Á¤·ÄÀ» À§ÇÑ ¹ÝÀÚµ¿ Á¤·Ä

405 nm ¿£Áø°ú 20¹è ·»Áî ÀåÂø

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Á¦Ç°¸í :POLOS Beam Laser Writer (ºö ·¹ÀÌÀú ¶óÀÌÅÍ)
ÃÖ´ë ±âÆÇ Å©±â: 106 x 106mm
Wave Length: 405nm
Resolution: 0.8¸¶ÀÌÅ©·Î¹ÌÅÍ

POLOS BEAM Datasheet 2024
POLOS Beam - System Comparison Datasheet 2024
 

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    ³ª³ëÆÐÅÏÀ» ¸¸µå´Â Æí¸®ÇÑ ¹æ¹ýÀ» Á¦°øÇÕ´Ï´Ù.
    À̴ ƯÈ÷ ¿¬±¸ ¹× ½Å¼ÓÇÑ ÇÁ·ÎÅäŸÀÔ Á¦ÀÛ ¸ñÀû¿¡ À¯¿ëÇÕ´Ï´Ù.

-POLOS Beam Laser Writer Àº ¼º´É¿¡ ¿µÇâÀ» ¹ÌÄ¡Áö ¾ÊÀ¸¸é¼­
     ÀÌ·¯ÇÑ ÀÌÁ¡À» µ¥½ºÅ©Åé¿¡ Á¦°øÇÏ´Â ÇÕ¸®ÀûÀÎ ¼ÒÇü ¼Ö·ç¼ÇÀÔ´Ï´Ù.

-POLOS Beam Laser Writer ´Â UV ·¹ÀÌÀú ºöÀ» »ç¿ëÇÏ¿© Æ÷Åä·¹Áö½ºÆ®ÀÇ
     ¸ðµç ÆÐÅÏÀ» ³ë±¤ÇÒ ¼ö ÀÖ´Â Á¤¹ÐÇÑ ÁöÁ¡À» ¸¸µå´Â
     Äü½º¿Ò °¡´ÉÇÑ ¸®¼Ò±×·¡ÇÇ ½Ã½ºÅÛ ÀÔ´Ï´Ù.

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      ¿©·¯ ³ë±¤À» ÇÔ²² ½ºÆ¼ÄªÇÕ´Ï´Ù.

-POLOS Beam Laser Writer Àº 405nm ¿£Áø°ú 20¹è ´ë¹°·»Á
      ÀåÂøÇÒ °æ¿ì 4ÀÎÄ¡ ¿þÀÌÆÛ¿¡¼­ (CD) 0.8¥ìmº¸´Ù ÀÛÀº ÇÇó¸¦
      »ý¼ºÇÒ ¼ö ÀÖ½À´Ï´Ù.

 

Compact : µ¥½ºÅ©Åé ÄÄÇ»Åͺ¸´Ù ÀÛÀº, ¸ðµç ±â´ÉÀ» °®Ãá
      ¸¶½ºÅ©¸®½º ¸®¼Ò±×·¡ÇÇÀÔ´Ï´Ù.

 

Powerful: 2ÃÊ À̳»¿¡ ¾²±â Çʵ带 ³ëÃâÇϸ鼭 ¼­ºê¸¶ÀÌÅ©·Ð
       ºÐÇØ´ÉÀ» Á¦°øÇÕ´Ï´Ù.

Ultrafast Autofocus :ÇÇ¿¡Á¶ ¾×Ãß¿¡ÀÌÅÍ´Â Æó¼âÇü ·çÇÁ ÃÊÁ¡ ±¤ÇÐ ÀåÄ¡¿Í
       °áÇÕÇϸé 1ÃÊ À̳»¿¡ ÃÊÁ¡¿¡ µµ´ÞÇÕ´Ï´Ù.

 

Æí¸®ÇÑ ´ÙÃþ ¹ÝÀÚµ¿ Á¤·ÄÀ» ÅëÇØ ¸î ºÐ ¾È¿¡ ´ÙÃþ Á¤·ÄÀ» ¿Ï·áÇÒ ¼ö ÀÖ½À´Ï´Ù.

Æ÷ÇÔµÈ ¼ÒÇÁÆ®¿þ¾î´Â ¸ðµç ÆÐÅÍ´× ÀÛ¾÷À» ºü¸£°Ô ó¸®ÇÕ´Ï´Ù.

·ÎµåÇϰí, Á¤·ÄÇϰí, ³ëÃâÇϱ⸸ ÇÏ¸é µË´Ï´Ù.

Ž»öÀº CNC ½Ã½ºÅÛ°ú ºñ½ÁÇÕ´Ï´Ù.

 

Key features

-¶óÀÌÆÃ ÇØ»óµµ < 1 ¥ìm

-Adjustable writing field and resolution with exchangeable objectives

Compatible with CAD files or bitmap images

Compatible with g-line photoresists

Compatible with a wide range of substrates (silicon, glass, metal, plastic, ... )


Compatible with any sample size up to 4¡± wafer Camera feedback for alignment steps

 

Key benefits

Time and money saving due to the absence of a hard-mask

lntuitive alignment method with direct overlay of the design on the sample

Table-top with very small foot print

Technology well suited for microelectronics, 2D-materials, microfluidics, optoelectronics, opties or any other 2D microfabrication application

POLOS¢ç BEAM Mk2
--MASKLESS LITHOGRAPHY SYSTEM

Maskless lithography enables nanopatterning without photomasks.

- 0.1 um repeatability and 4" stage travel
- 0.8 um resolution

Features:
- 20x/0.75 NA Nikon UV-corrected objectives
- Epi-illumination for sample viewing and multilayer alignment
- Full HD 120 FPS CMOS camera for real-time and lag-free observation
- Closed-loop autofocus built into optics
- Piezo-actuated z-axis for fast autofocus
- Single USB 3.1 interface for system control

Specifications:
- Minimum Linewidth: 0.8 um
- Stage Bidirectional Repeatability: 0.1 um
- Exposure wavelength: 405 nm
- Maximum Writefield: 400 ¥ìm x 400 ¥ìm
- Writing Area: 106 * 106 mm ( 4" compatible)
- BEAM Xplorer software included
- High Performance Laptop included.
Weight Lighter than 20 kg
System size 330 x 310 x 340 mm

 

Mask Cleaner

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ALD System(Atomic Layer Deposition)

espro Flowmeter

À缺ITS co,
Tel:031-479-4211/2
Mail: contrabase26@gmail.com     jsi@jsits.com
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