ALD (Atomic Layer Deposition) |
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ALD systems and equipment for research to pilot lines, from thermal ALD equipment to plasma ALD equipment. |
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Email :contrabase26@gmail.com |
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AT410Àº ½ÃÀå¿¡¼ °¡Àå ºñ¿ë È¿À²ÀûÀÎ ½á¸Ö ALD ½Ã½ºÅÛÀÔ´Ï´Ù. ÀÛÀº °ø°£À» Â÷ÁöÇÏ´Â µ¥½ºÅ©Å¾ ½Ã½ºÅÛ
¹ÝµµÃ¼ µî±Þ ±Ý¼Ó ¹ÐºÀ ¶óÀÎ ¹× °í¿Â ȣȯ °í¼Ó ÆÞ½º ALD ¹ëºê. ÅëÇÕµÈ ºÒÈ°¼º °¡½º ÆÛÁö¸¦ À§ÇÑ ÃÊ°í¼Ó MFC. ´õ ÀÛÀº Å©±â³ª ´Ù¸¥ ¸ð¾ç(³ôÀÌ 11mm)¿¡ ¸Â°Ô ¸ÂÃã ¼³Á¤ÇÒ ¼ö ÀÖ´Â 4ÀÎÄ¡ ¿øÇü ô. 3°³ÀÇ À¯±â±Ý¼Ó Àü±¸Ã¼¿Í 2°³(ÃÖ´ë 3°³)ÀÇ counter-reactant. ÀüüÀûÀ¸·Î °¡¿µÇ´Â ¶óÀÎ(from precusor to chamber). ¾Ë·ç¹Ì´½(¹ÝµµÃ¼ µî±Þ) è¹ö ? ÃÖ´ë ¹üÀ§ 320¡ÆC 7ÀÎÄ¡ ÅÍÄ¡½ºÅ©¸° PLC ÄÁÆ®·Ñ·¯(PC ºÒÇÊ¿ä)
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AT410M |
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AT410Àº ½ÃÀå¿¡¼ °¡Àå ºñ¿ë È¿À²ÀûÀÎ ½á¸Ö ALD ½Ã½ºÅÛÀÔ´Ï´Ù. |
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AT410M-precursor-Ãø¸é |
AT410M-Èĸé |
AT410M-Èĸé |
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Àåºñ Ư¡ |
ÀÛÀº °ø°£À» Â÷ÁöÇÏ´Â µ¥½ºÅ©Å¾ ½Ã½ºÅÛ(< 0.15m3 | 2.5Æò¹æÇÇÆ®) ÅëÇÕµÈ ºÒÈ°¼º °¡½º ÆÛÁö¸¦ À§ÇÑ ÃÊ°í¼Ó MFC¸¦ °®Ãá °í¿Â ȣȯ °í¼Ó ÆÞ½º ALD ¹ëºêÀÔ´Ï´Ù. ´õ ÀÛÀº Å©±â³ª ´Ù¸¥ ¸ð¾ç(³ôÀÌ 11mm)¿¡ ¸Â°Ô ¸ÂÃã ¼³Á¤ÇÒ ¼ö ÀÖ´Â 4ÀÎÄ¡ ¿øÇü ô. 3°³ÀÇ À¯±â±Ý¼Ó Àü±¸Ã¼¿Í 2°³(ÃÖ´ë 3°³)ÀÇ ¹Ý´ë ¹ÝÀÀ¹°. Àüü¿¡ °ÉÃÄ °¡¿µÈ ¶óÀÎ(Àü±¸Ã¼ºÎÅÍ Ã¨¹ö±îÁö). ³ôÀº ³ëÃâ(Æ®·»Ä¡ ¹× ´Ù°ø¼º ±âÆÇÀÇ °æ¿ì) ¹× Á¤Àû ó¸® ¸ðµå ¸ðµç ¾Ë·ç¹Ì´½(¹ÝµµÃ¼ µî±Þ) è¹ö ? ÃÖ´ë ¹üÀ§ 320¡ÆC 7ÀÎÄ¡ ÅÍÄ¡½ºÅ©¸° PLC ÄÁÆ®·Ñ·¯(PC ºÒÇÊ¿ä) Æò»ý ¼ÒÇÁÆ®¿þ¾î ¾÷±×·¹À̵å Æ÷ÇÔ 1³â º¸Áõ(ºÎÇ° Æ÷ÇÔ) |
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Àåºñ ½ºÆå |
½Ç¿Â ~ 320¡ÆC ¡¾ 1¡ÆCÀÇ Ã¨¹ö ¿Âµµ; RT ~ 180¡ÆC ¡¾ 2¡ÆCÀÇ Àü±¸Ã¼ ¿Âµµ(°¡¿ ÀçŶ Æ÷ÇÔ) ½ÃÀå¿¡¼ °¡Àå ÀÛÀº ¼³Ä¡ °ø°£(2.5Æò¹æÇÇÆ®), º¥Ä¡Å¾ ¼³Ä¡ ¹× Ŭ¸°·ë ȣȯ ½ÃÀå¿¡¼ ½Ã½ºÅÛ À¯Áö °ü¸®°¡ °£´ÜÇÏ°í À¯Æ¿¸®Æ¼ ¹× Àü±¸Ã¼ »ç¿ë·®ÀÌ °¡Àå ³·½À´Ï´Ù. °£¼ÒÈµÈ Ã¨¹ö µðÀÚÀΰú ÀÛÀº è¹ö ºÎÇÇ ºü¸¥ »çÀÌŬ¸µ ¼º´É(ÃÖ´ë 1.2nm/min Al 2 O 3 ) ¹× ³ôÀº ³ëÃâ, ±íÀº ħÅõ ó¸® °¡´É ´ÙÁß »ç¿ëÀÚ È¯°æ¿¡¼µµ ¾ÈÀüÇÑ ¿î¿µÀ» À§ÇÑ Full HW, SW ¿¬µ¿ |
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Àåºñ ¿É¼Ç |
¸ÂÃãÇü ô/°¡¾ÐÆÇ(»ç°¢Çü, ÀÛÀº Á¶°¢¿ë Ȩ, ºÐ¸») ¸ÂÃãÇü è¹ö(µÎ²¨¿î ±âÆÇ) ATOzone ? ¿ÀÁ¸ ¹ß»ý±â(ÀϺΠÇʸ§¿¡ ÇÊ¿ä: Pt, Ir, SiO 2 , MoO 2 , 60¡ÆC ¹Ì¸¸ÀÇ °íÇ°Áú Al 2 O 3 , °íÇ°Áú HfO 2 ) ¿É¼Ç - ÁÖº¯ ¿ÀÁ¸ °¡½º¸¦ ½Ç½Ã°£À¸·Î °¨ÁöÇÏ´Â ¿ÀÁ¸ ¾ÈÀü ¸ð´ÏÅÍ QCM(Quartz Crystal Microbalance) ±Û·Îºê¹Ú½º ÅëÇÕ(ÀϹÝÀûÀ¸·Î ±âÆÇÀ» ½À±â, Ȳȹ° µî¿¡ ³ëÃâ½ÃÅ°Áö ¾Ê±â À§ÇØ ÇÊ¿ä) ¿ÜºÎ Á¦¾î ? PC/¼ÒÇÁÆ®¿þ¾î ¸µÅ©(¿ø°Ý ÇÁ·Î±×·¡¹Ö ¹× ½ÇÇà °¡´É) Åëdz °¡´ÉÇÑ Àü±¸Ã¼ ijºñ´Ö ¿¹ºñ è¹ö ÀúÁõ±â¾Ð Àü±¸Ã¼¿ë IGPA(ºÒÈ°¼º °¡½º ¾Ð·Â º¸Á¶:inert gas pressure assist) Àü±¸Ã¼¿¡¼ÀÇ ´õ ³ôÀº ¿Âµµ(ÃÖ´ë 180¡ÆC) ¼¼ ¹ø° ¹Ý´ë¹ÝÀÀ¹°(Third counter reactant) ¼¼ ¹ø° ¿ª¹ÝÀÀ¹°(Third counter reactant)ÀÇ ¼ÒÇÁÆ®¿þ¾î Á¦¾î |
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¼³Ä¡½Ã ÂüÁ¶»çÇ× |
ÀÚ¼¼ÇÑ ÁöħÀº ÇÁ·¹Á¨Å×ÀÌ¼Ç ¹× ºñµð¿À ÁöħÀ» ÂüÁ¶ÇϽʽÿÀ. " AT410/610 ¼³Ä¡ ¹× ½ÃÀÛ " N 2 ÆÛÁö °¡½º´Â Â÷´Ü ¹ëºê(10 ? 30 psi·Î Á¶Àý, ±Ý¼Ó ¹ÐºÀ)¸¦ »ç¿ëÇÏ¿© >99.9995%¿©¾ß ÇÕ´Ï´Ù. ÀÔ·Â ¶óÀÎÀº 1/4 ¾Ï³ª»ç VCR ¾ÐÃà ÇÇÆÃÀÔ´Ï´Ù. 1/4¡È ±Ý¼Ó ¶óÀÎÀ» ÅëÇØ > 99.9995% Áú¼Ò(UHP) ÆÛÁö °¡½º¸¦ µÞ¸éÀÇ 1/4¡È ¾ÐÃà ÇÇÆÿ¡ ¿¬°áÇÕ´Ï´Ù. 1/4ÀÎÄ¡ Æú¸®¿¡Æ¿·» Æ©ºê³ª ±Ý¼Ó ¶óÀÎÀ» ÅëÇØ 90-110psi CDA(±ú²ýÇÑ °ÇÁ¶ °ø±â)¸¦ CDA(Clean Dry Air)¶ó°í Ç¥½ÃµÈ ´Ù¸¥ 1/4ÀÎÄ¡ ¾ÐÃà ÇÇÆÿ¡ ¿¬°áÇÕ´Ï´Ù. ÃÖ¼Ò 12cfm ½À½Ä ÆßÇÁ(**PTFE Áø°ø À¯Ã¼(¿¹: Fomblin) ÇÊ¿ä )(610 ¹× 810Àº ÀϹÝÀûÀ¸·Î 19.5cfm ÀÌ»óÀÇ ´õ Å« ÆßÇÁ¸¦ »ç¿ëÇÔ) NW25(KF25)(1¡È) ¿¬°á ¹× ¹è±â ¶óÀÎ(5cfm ÃÊ°ú) 1m ÀÌ»óÀº NW40(1.5¡È) ¹è±â ¶óÀÎÀ» »ç¿ëÇØ¾ß ÇÕ´Ï´Ù. ¾ÏÇü VCR ¿¤º¸¿ì¸¦ ÅëÇØ Àü±¸Ã¼¸¦ ºÎÂøÇÕ´Ï´Ù (Ç×»ó »õ °³½ºÅ¶À» »ç¿ëÇϽʽÿÀ). ¿¤º¸¿ì: 1/4¡È °³½ºÅ¶ ¸ÕÀú(Àå°© Âø¿ë ½Ã) Àü±¸Ã¼ ºÎÂø¿¡ ´ëÇؼ´Â AT410/AT610 µµ±¸ ¹× ¼ÒÇÁÆ®¿þ¾î ÀÛµ¿À» ÂüÁ¶ÇϽʽÿÀ . |
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¼ÒÇÁÆ®¿þ¾î |
ÀÚ¼¼ÇÑ ÁöħÀº ÇÁ·¹Á¨Å×ÀÌ¼Ç ¹× ºñµð¿À ÁöħÀÎ " AT410_610 ¼³Ä¡ ¹× ½ÃÀÛ " À» ÂüÁ¶ÇϽʽÿÀ. 7ÀÎÄ¡ ÅÍÄ¡ ½ºÅ©¸° Ç¥ÁØ ALD »çÀÌŬ Àº ¹°·Ð ³ª³ë¶ó¹Ì³×ÀÌÆ®, µµÇÎµÈ ¹Ú¸· ¹× »ï¿ø°è ¹Ú¸·ÀÇ ÁõÂø¿¡ ÀûÇÕÇÑ °í±Þ Á¦¾î
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ALD Systems ComparisonCompare ALD equipment and systems manufacturedAnric Technologies. Compare by size and capability. |
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AT200M |
AT410M/610/810 |
AT650T |
AT650P |
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Desktop (W: ~11¡± (27.9cm) x D: 15¡± (38.1cm) x H: 14.5¡± (36.8cm)) | Desktop (W: 24.5¡± (62.3cm) x D: 24¡± (61cm) x H: 15.75¡± (40.5cm))[610 D: 25¡È (63.5cm)] | Desktop (W: 15¡± (38.1cm) x D: 15¡± (38.1cm) x H: Less that 38¡± (96.5cm)) | Desktop (W: 15¡± (38.1cm) x D: 15¡± (38.1cm) x H: 38¡± (96.5cm)) | |||||
Sample Size = 2 inch (x2) up to 2 x 2 x 2¡± volume | 410 = 4 inch; 610 = 6 inch; 810 = 8 inch | 6 inch | 6 inch | |||||
Thermal to 300¡ÆC | Thermal to 320¡ÆC | Thermal to 400¡ÆC (upgradeable to Plasma) |
Plasma and Thermal to 400¡ÆC |
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One Precursor/One Counter Reactant |
Three Precursors/ Up to Three Counter Reactants |
Four Precursors/Four Counter Reactants |
Four Precursors/Four Counter Reactants |
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Heated Precursor to 150¡ÆC | Heated Precursor to 180¡ÆC (N2 Assist Available) | 3 Precursors to 185¡ÆC (with optional pressure boost) , 1 at RT | 3 Precursors to 185¡ÆC (with optional pressure boost) , 1 at RT | |||||
All stainless steel chamber and metal sealed stainless lines | All aluminum chamber (hot walled) and metal sealed stainless lines | All aluminum chamber (warm walled) and metal sealed stainless lines and chuck | All aluminum chamber (warm walled) and metal sealed stainless lines and chuck | |||||
Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | |||||
Ultrafast MFC | Ultrafast MFC | Up to four ultrafast MFCs | Up to four ultrafast MFCs | |||||
5¡± Display w. Integrated PLC |
7¡° Display with integrated PLC |
10¡° Display with integrated PLC |
10¡° Display with integrated PLC |
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À缺ITS co. °æ±âµµ
¾È¾ç½Ã µ¿¾È±¸ È£°èµ¿ 555-9 ¾È¾ç
±¹Á¦ À¯Åë´ÜÁö 17µ¿ 127È£ Contact us :contrabase26@gmail.com jsi@jsits.com |
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