ALD (Atomic Layer Deposition)
 
               
 

ALD systems and equipment for research to pilot lines, from thermal ALD equipment to plasma ALD equipment.
Shop by size and capability, or compare our systems using the button below.


 
           
           
               
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AT200M
AT410
AT650P
AT650T
AT-OZONE Generator
AT610
AT810

 

             
 

AT410Àº ½ÃÀå¿¡¼­ °¡Àå ºñ¿ë È¿À²ÀûÀÎ ½á¸Ö ALD ½Ã½ºÅÛÀÔ´Ï´Ù.

ÀÛÀº °ø°£À» Â÷ÁöÇÏ´Â µ¥½ºÅ©Å¾ ½Ã½ºÅÛ
¹ÝµµÃ¼ µî±Þ ±Ý¼Ó ¹ÐºÀ ¶óÀÎ ¹× °í¿Â ȣȯ °í¼Ó ÆÞ½º ALD ¹ëºê.
ÅëÇÕµÈ ºÒÈ°¼º °¡½º ÆÛÁö¸¦ À§ÇÑ ÃÊ°í¼Ó MFC.
´õ ÀÛÀº Å©±â³ª ´Ù¸¥ ¸ð¾ç(³ôÀÌ 11mm)¿¡ ¸Â°Ô ¸ÂÃã ¼³Á¤ÇÒ ¼ö ÀÖ´Â 4ÀÎÄ¡ ¿øÇü ô.
3°³ÀÇ À¯±â±Ý¼Ó Àü±¸Ã¼¿Í 2°³(ÃÖ´ë 3°³)ÀÇ counter-reactant.
ÀüüÀûÀ¸·Î °¡¿­µÇ´Â ¶óÀÎ(from precusor to chamber).
¾Ë·ç¹Ì´½(¹ÝµµÃ¼ µî±Þ) è¹ö ? ÃÖ´ë ¹üÀ§ 320¡ÆC
7ÀÎÄ¡ ÅÍÄ¡½ºÅ©¸° PLC ÄÁÆ®·Ñ·¯(PC ºÒÇÊ¿ä)

 

 

AT410M

     
AT410Àº ½ÃÀå¿¡¼­ °¡Àå ºñ¿ë È¿À²ÀûÀÎ ½á¸Ö ALD ½Ã½ºÅÛÀÔ´Ï´Ù.
     

AT410M-precursor-Ãø¸é

AT410M-Èĸé

AT410M-Èĸé

Àåºñ Ư¡
ÀÛÀº °ø°£À» Â÷ÁöÇÏ´Â µ¥½ºÅ©Å¾ ½Ã½ºÅÛ(< 0.15m3 | 2.5Æò¹æÇÇÆ®)
ÅëÇÕµÈ ºÒÈ°¼º °¡½º ÆÛÁö¸¦ À§ÇÑ ÃÊ°í¼Ó MFC¸¦ °®Ãá °í¿Â ȣȯ °í¼Ó ÆÞ½º ALD ¹ëºêÀÔ´Ï´Ù.
´õ ÀÛÀº Å©±â³ª ´Ù¸¥ ¸ð¾ç(³ôÀÌ 11mm)¿¡ ¸Â°Ô ¸ÂÃã ¼³Á¤ÇÒ ¼ö ÀÖ´Â 4ÀÎÄ¡ ¿øÇü ô.
3°³ÀÇ À¯±â±Ý¼Ó Àü±¸Ã¼¿Í 2°³(ÃÖ´ë 3°³)ÀÇ ¹Ý´ë ¹ÝÀÀ¹°.
Àüü¿¡ °ÉÃÄ °¡¿­µÈ ¶óÀÎ(Àü±¸Ã¼ºÎÅÍ Ã¨¹ö±îÁö).
³ôÀº ³ëÃâ(Æ®·»Ä¡ ¹× ´Ù°ø¼º ±âÆÇÀÇ °æ¿ì) ¹× Á¤Àû ó¸® ¸ðµå
¸ðµç ¾Ë·ç¹Ì´½(¹ÝµµÃ¼ µî±Þ) è¹ö ? ÃÖ´ë ¹üÀ§ 320¡ÆC
7ÀÎÄ¡ ÅÍÄ¡½ºÅ©¸° PLC ÄÁÆ®·Ñ·¯(PC ºÒÇÊ¿ä)
Æò»ý ¼ÒÇÁÆ®¿þ¾î ¾÷±×·¹À̵å Æ÷ÇÔ
1³â º¸Áõ(ºÎÇ° Æ÷ÇÔ)
Àåºñ ½ºÆå
½Ç¿Â ~ 320¡ÆC ¡¾ 1¡ÆCÀÇ Ã¨¹ö ¿Âµµ; RT ~ 180¡ÆC ¡¾ 2¡ÆCÀÇ Àü±¸Ã¼ ¿Âµµ(°¡¿­ ÀçŶ Æ÷ÇÔ)
½ÃÀå¿¡¼­ °¡Àå ÀÛÀº ¼³Ä¡ °ø°£(2.5Æò¹æÇÇÆ®), º¥Ä¡Å¾ ¼³Ä¡ ¹× Ŭ¸°·ë ȣȯ
½ÃÀå¿¡¼­ ½Ã½ºÅÛ À¯Áö °ü¸®°¡ °£´ÜÇÏ°í À¯Æ¿¸®Æ¼ ¹× Àü±¸Ã¼
»ç¿ë·®ÀÌ °¡Àå ³·½À´Ï´Ù.
°£¼ÒÈ­µÈ è¹ö µðÀÚÀΰú ÀÛÀº è¹ö ºÎÇÇ
ºü¸¥ »çÀÌŬ¸µ ¼º´É(ÃÖ´ë 1.2nm/min Al 2 O 3 ) ¹× ³ôÀº ³ëÃâ,
±íÀº ħÅõ ó¸® °¡´É
´ÙÁß »ç¿ëÀÚ È¯°æ¿¡¼­µµ ¾ÈÀüÇÑ ¿î¿µÀ» À§ÇÑ Full HW, SW ¿¬µ¿
Àåºñ ¿É¼Ç
¸ÂÃãÇü ô/°¡¾ÐÆÇ(»ç°¢Çü, ÀÛÀº Á¶°¢¿ë Ȩ, ºÐ¸»)
¸ÂÃãÇü è¹ö(µÎ²¨¿î ±âÆÇ)
ATOzone ? ¿ÀÁ¸ ¹ß»ý±â(ÀϺΠÇʸ§¿¡ ÇÊ¿ä: Pt, Ir, SiO 2 , MoO 2 , 60¡ÆC ¹Ì¸¸ÀÇ °íÇ°Áú Al 2 O 3 , °íÇ°Áú HfO 2 )
¿É¼Ç - ÁÖº¯ ¿ÀÁ¸ °¡½º¸¦ ½Ç½Ã°£À¸·Î °¨ÁöÇÏ´Â ¿ÀÁ¸ ¾ÈÀü ¸ð´ÏÅÍ
QCM(Quartz Crystal Microbalance)
±Û·Îºê¹Ú½º ÅëÇÕ(ÀϹÝÀûÀ¸·Î ±âÆÇÀ» ½À±â, Ȳȭ¹° µî¿¡ ³ëÃâ½ÃÅ°Áö ¾Ê±â À§ÇØ ÇÊ¿ä)
¿ÜºÎ Á¦¾î ? PC/¼ÒÇÁÆ®¿þ¾î ¸µÅ©(¿ø°Ý ÇÁ·Î±×·¡¹Ö ¹× ½ÇÇà °¡´É)
Åëdz °¡´ÉÇÑ Àü±¸Ã¼ ijºñ´Ö
¿¹ºñ è¹ö
ÀúÁõ±â¾Ð Àü±¸Ã¼¿ë IGPA(ºÒÈ°¼º °¡½º ¾Ð·Â º¸Á¶:inert gas pressure assist)
Àü±¸Ã¼¿¡¼­ÀÇ ´õ ³ôÀº ¿Âµµ(ÃÖ´ë 180¡ÆC)
¼¼ ¹ø° ¹Ý´ë¹ÝÀÀ¹°(Third counter reactant)
¼¼ ¹ø° ¿ª¹ÝÀÀ¹°(Third counter reactant)ÀÇ ¼ÒÇÁÆ®¿þ¾î Á¦¾î
¼³Ä¡½Ã ÂüÁ¶»çÇ×
ÀÚ¼¼ÇÑ ÁöħÀº ÇÁ·¹Á¨Å×ÀÌ¼Ç ¹× ºñµð¿À ÁöħÀ» ÂüÁ¶ÇϽʽÿÀ. " AT410/610 ¼³Ä¡ ¹× ½ÃÀÛ "
N 2 ÆÛÁö °¡½º´Â Â÷´Ü ¹ëºê(10 ? 30 psi·Î Á¶Àý, ±Ý¼Ó ¹ÐºÀ)¸¦ »ç¿ëÇÏ¿© >99.9995%¿©¾ß ÇÕ´Ï´Ù.
ÀÔ·Â ¶óÀÎÀº 1/4 ¾Ï³ª»ç VCR ¾ÐÃà ÇÇÆÃÀÔ´Ï´Ù.
1/4¡È ±Ý¼Ó ¶óÀÎÀ» ÅëÇØ > 99.9995% Áú¼Ò(UHP) ÆÛÁö °¡½º¸¦ µÞ¸éÀÇ 1/4¡È ¾ÐÃà ÇÇÆÿ¡ ¿¬°áÇÕ´Ï´Ù.
1/4ÀÎÄ¡ Æú¸®¿¡Æ¿·» Æ©ºê³ª ±Ý¼Ó ¶óÀÎÀ» ÅëÇØ 90-110psi CDA(±ú²ýÇÑ °ÇÁ¶ °ø±â)¸¦ CDA(Clean Dry Air)¶ó°í Ç¥½ÃµÈ ´Ù¸¥ 1/4ÀÎÄ¡ ¾ÐÃà ÇÇÆÿ¡ ¿¬°áÇÕ´Ï´Ù.
ÃÖ¼Ò 12cfm ½À½Ä ÆßÇÁ(**PTFE Áø°ø À¯Ã¼(¿¹: Fomblin) ÇÊ¿ä )(610 ¹× 810Àº ÀϹÝÀûÀ¸·Î 19.5cfm ÀÌ»óÀÇ ´õ Å« ÆßÇÁ¸¦ »ç¿ëÇÔ)
NW25(KF25)(1¡È) ¿¬°á ¹× ¹è±â ¶óÀÎ(5cfm ÃÊ°ú)
1m ÀÌ»óÀº NW40(1.5¡È) ¹è±â ¶óÀÎÀ» »ç¿ëÇØ¾ß ÇÕ´Ï´Ù.
¾ÏÇü VCR ¿¤º¸¿ì¸¦ ÅëÇØ Àü±¸Ã¼¸¦ ºÎÂøÇÕ´Ï´Ù
(Ç×»ó »õ °³½ºÅ¶À» »ç¿ëÇϽʽÿÀ).
¿¤º¸¿ì: 1/4¡È °³½ºÅ¶ ¸ÕÀú(Àå°© Âø¿ë ½Ã)
Àü±¸Ã¼ ºÎÂø¿¡ ´ëÇؼ­´Â AT410/AT610 µµ±¸ ¹× ¼ÒÇÁÆ®¿þ¾î ÀÛµ¿À» ÂüÁ¶ÇϽʽÿÀ .
Rear-of-AT410-labeled
¼ÒÇÁÆ®¿þ¾î

ÀÚ¼¼ÇÑ ÁöħÀº ÇÁ·¹Á¨Å×ÀÌ¼Ç ¹× ºñµð¿À ÁöħÀÎ " AT410_610 ¼³Ä¡ ¹× ½ÃÀÛ " À» ÂüÁ¶ÇϽʽÿÀ.

7ÀÎÄ¡ ÅÍÄ¡ ½ºÅ©¸°
ÆгÎÀ» °®Ãá HMI(Human Machine Interface) PLC ½Ã½ºÅÛ

Ç¥ÁØ ALD »çÀÌŬ Àº ¹°·Ð ³ª³ë¶ó¹Ì³×ÀÌÆ®, µµÇÎµÈ ¹Ú¸· ¹× »ï¿ø°è ¹Ú¸·ÀÇ ÁõÂø¿¡ ÀûÇÕÇÑ °í±Þ Á¦¾î
°íÇ°ÁúÀÇ Å×½ºÆ®µÈ ÇÁ·Î¼¼½º¸¦ À§ÇÑ ·¹½ÃÇÇ µ¥ÀÌÅͺ£À̽º
¸ÂÃã ·¹½ÃÇÇ ÀÔ·Â È­¸é
°øÁ¤»óÅ ½Ç½Ã°£ Ç¥½Ã
°³º°ÀûÀ¸·Î ÇÁ·Î±×·¡¹Ö °¡´ÉÇÑ °¡¿­¿ø ¿Âµµ
3¿ø È­ÇÕ¹° ¹× ³ª³ë ÀûÃþü¸¦ À§ÇÑ ³»ÀåÇü ÆÞ½º ½ÃÄö½º
°£´ÜÇÑ Áú¹®À¸·Î ºü¸£°Ô ½ÇÇàÇÏ¿© »ç¿ëÀÚ¸¦ À¯µµÇÕ´Ï´Ù.
ÀÔ·Â ÇÏÀ§ ÁÖ±â ¹× Àüü ÁÖ±â

 

 

                 
 

ALD Systems Comparison

Compare ALD equipment and systems manufacturedAnric Technologies. Compare by size and capability.

 
                 
 
AT200M
AT410M/610/810
AT650T
AT650P
 
 
 
  Desktop (W: ~11¡± (27.9cm) x D: 15¡± (38.1cm) x H: 14.5¡± (36.8cm))   Desktop (W: 24.5¡± (62.3cm) x D: 24¡± (61cm) x H: 15.75¡± (40.5cm))[610 D: 25¡È (63.5cm)]   Desktop (W: 15¡± (38.1cm) x D: 15¡± (38.1cm) x H: Less that 38¡± (96.5cm))   Desktop (W: 15¡± (38.1cm) x D: 15¡± (38.1cm) x H: 38¡± (96.5cm))  
  Sample Size = 2 inch (x2) up to 2 x 2 x 2¡± volume   410 = 4 inch; 610 = 6 inch; 810 = 8 inch   6 inch   6 inch  
  Thermal to 300¡ÆC   Thermal to 320¡ÆC   Thermal to 400¡ÆC
(upgradeable to Plasma)
  Plasma and Thermal to
400¡ÆC
 
  One Precursor/One Counter
Reactant
  Three Precursors/ Up to Three Counter
Reactants
  Four Precursors/Four
Counter Reactants
  Four Precursors/Four
Counter Reactants
 
  Heated Precursor to 150¡ÆC   Heated Precursor to 180¡ÆC (N2 Assist Available)   3 Precursors to 185¡ÆC (with optional pressure boost) , 1 at RT   3 Precursors to 185¡ÆC (with optional pressure boost) , 1 at RT  
  All stainless steel chamber and metal sealed stainless lines   All aluminum chamber (hot walled) and metal sealed stainless lines   All aluminum chamber (warm walled) and metal sealed stainless lines and chuck   All aluminum chamber (warm walled) and metal sealed stainless lines and chuck  
  Heated lines and fast pulsing ALD valves   Heated lines and fast pulsing ALD valves   Heated lines and fast pulsing ALD valves   Heated lines and fast pulsing ALD valves  
  Ultrafast MFC   Ultrafast MFC   Up to four ultrafast MFCs   Up to four ultrafast MFCs  
  5¡± Display w. Integrated
PLC
  7¡° Display with integrated
PLC
  10¡° Display with integrated
PLC
  10¡° Display with integrated
PLC
 
                 

 

     
 

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