ALD (Atomic Layer Deposition) |
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ALD systems and equipment for research to pilot lines, from thermal ALD equipment to plasma ALD equipment. |
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Email :contrabase26@gmail.com |
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Anric Technologies´Â ½ÃÀå¿¡¼ °¡Àå ÀÛÀº Å©±âÀÇ ALD(¿øÀÚÃþ ÁõÂø) µµ±¸ÀÔ´Ï´Ù. ÀÛÀº ¼³Ä¡ °ø°£(~ 15in3 ¶Ç´Â 38.1cm3)
Àü±¸Ã¼ 1°³¿Í ¿ª¹ÝÀÀ¹° 1°³(4Æ÷Æ® ¿É¼Çµµ »ç¿ë °¡´É) ¹ÝµµÃ¼ µî±Þ ºÎÇ° ±Ý¼Ó ¹ÐºÀ ¶óÀÎ ÅëdzÇü Àü±¸Ã¼ ¿£Å¬·ÎÀú ÅëÇÕµÈ ºÒÈ°¼º °¡½º ÆÛÁö¸¦ À§ÇÑ ÃÊ°í¼Ó MFC¸¦ °®Ãá °í¿Â ȣȯ, °í¼Ó ÆÞ½º ALD ¹ëºê Àü±¸Ã¼(ÃÖ´ë 150¡ÆC), ¸Å´ÏÆúµå, ÀÀÃà ¹æÁö¸¦ À§ÇØ °¡¿µÈ è¹ö. °ß°íÇÑ PLC ±â¹Ý »ç¿ëÀÚ ÀÎÅÍÆäÀ̽º ½ºÅ×Àη¹½º ½ºÆ¿ è¹ö´Â 300¡ÆC±îÁö °¡¿µÉ ¼ö ÀÖ½À´Ï´Ù.
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AT200M |
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AT200M(±Û·¯ºê¹Ú½º¿¡ µé¾î°¥ ¸¸Å ÀÛÀº Å©±â)Àº ½ÃÁß¿¡¼ ±¸ÀÔÇÒ ¼ö ÀÖ´Â °¡Àå ÀÛÀº Å©±âÀÇ ALD(¿øÀÚÃþ ÁõÂø) ½Ã½ºÅÛÀÔ´Ï´Ù. |
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AT200M-precursor-Ãø¸é-2380-by-2342 |
AT200M-Èĸé-2424-by-2342 |
Options-for-AT200M-cropped-79x80 |
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Àåºñ Ư¡ |
ÀÛÀº ¼³Ä¡ °ø°£(~ 15in3 ¶Ç´Â 38.1cm3)À¸·Î ±Û·Îºê¹Ú½º³ª SEM/TEM¿ë Áõ¹ß±â ¿·¿¡ ½±°Ô µé¾î°¥ ¼ö ÀÖ½À´Ï´Ù. ÇϳªÀÇ Àü±¸Ã¼¿Í ÇϳªÀÇ ¿ª¹ÝÀÀ¹° ÅëdzÇü Àü±¸Ã¼ ¿£Å¬·ÎÀú ÅëÇÕµÈ ºÒÈ°¼º °¡½º ÆÛÁö¸¦ À§ÇÑ ÃÊ°í¼Ó MFC¸¦ °®Ãá °í¿Â ȣȯ, °í¼Ó ÆÞ½º ALD ¹ëºê - Ç¥ÁØ ±Ý¼Ó ¹ÐºÀ ¶óÀÎ Àü±¸Ã¼(ÃÖ´ë 150¡ÆC), ¸Å´ÏÆúµå, ÀÀÃà ¹æÁö¸¦ À§ÇØ °¡¿µÈ è¹ö. ½ºÅ×Àη¹½º ½ºÆ¿ è¹ö´Â 300¡ÆC±îÁö °¡¿µÉ ¼ö ÀÖ½À´Ï´Ù. ÅëÇÕ PLC ÄÁÆ®·Ñ·¯°¡ Æ÷ÇÔµÈ 5¡È µð½ºÇ÷¹ÀÌ(PC ÇÊ¿ä ¾øÀ½) |
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Àåºñ ½ºÆå |
½Ç¿Â ~ 300¡ÆC ¡¾ 1¡ÆCÀÇ Ã¨¹ö ¿Âµµ RT ~ 150¡ÆC ¡¾ 2¡ÆCÀÇ Àü±¸Ã¼ ¿Âµµ(°¡¿ ÀçŶ Æ÷ÇÔ) ½ÃÀå¿¡¼ °¡Àå ÀÛÀº ¼³Ä¡ °ø°£(1.6Æò¹æÇÇÆ®), º¥Ä¡Å¾ ¼³Ä¡, Ŭ¸°·ë ȣȯ, ±Û·Îºê¹Ú½º¿¡µµ ÀûÇÕÇÕ´Ï´Ù. ½Ã½ºÅÛ À¯Áö °ü¸®°¡ °£´ÜÇÏ°í À¯Æ¿¸®Æ¼ ¹× Àü±¸Ã¼ »ç¿ë·®ÀÌ Àû½À´Ï´Ù. ÀÛÀº è¹ö º¼·ý ¸Å¿ì ºü¸¥ »çÀÌŬ¸µ ±â´É. ´ÙÁß »ç¿ëÀÚ È¯°æ¿¡¼µµ ¾ÈÀüÇÑ ¿î¿µÀ» À§ÇÑ Full HW, SW ¿¬µ¿ |
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Àåºñ ¿É¼Ç |
±Û·Îºê¹Ú½º ÅëÇÕÀÌ ÇÊ¿äÇÏÁö ¾Ê½À´Ï´Ù. [±Û·Îºê¹Ú½º¿¡ ¸Â½À´Ï´Ù.] ¸ÂÃãÇü ô/°¡¾ÐÆÇ(»ç°¢Çü, ¿øÇü, ÀÌÁß ±âÆÇ, ¹Ù½ºÄÏ, ÀÛÀº Á¶°¢, µÎ²¨¿î ±âÆÇ). ATOzone ? ¿ÀÁ¸ ¹ß»ý±â(ÀϺΠÇʸ§¿¡ ÇÊ¿ä: Pt, Ir, SiO 2 , MoO 2 , 60¡ÆC ¹Ì¸¸ÀÇ °íÇ°Áú Al 2 O 3 , °íÇ°Áú HfO 2 ) ¿É¼Ç - ÁÖº¯ ¿ÀÁ¸ °¡½º¸¦ ½Ç½Ã°£À¸·Î °¨ÁöÇÏ´Â ¿ÀÁ¸ ¾ÈÀü ¸ð´ÏÅÍ 4 Æ÷Æ® ¿É¼Ç(¿¹: °¡¿µÈ Àü±¸Ã¼ 2°³, °¡¿µÇÁö ¾ÊÀº Àü±¸Ã¼ 1°³, ¿ª¹ÝÀÀ¹° 1°³) ºÐ¸» ÄÚÆà µå·³ ¿ÜºÎ Á¦¾î ? PC/¼ÒÇÁÆ®¿þ¾î ¸µÅ©(¿ø°Ý ÇÁ·Î±×·¡¹Ö ¹× ½ÇÇà °¡´É) Åëdz °¡´ÉÇÑ Àü±¸Ã¼ ijºñ´Ö Æ÷ÇÔ ¿¹ºñ è¹ö |
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¼³Ä¡½Ã ÂüÁ¶»çÇ× |
ÀÚ¼¼ÇÑ ÁöħÀº " AT200M ¼³Ä¡ ¹× ½ÃÀÛ " ÁöħÀ» ÂüÁ¶ÇϽʽÿÀ. N 2 ÆÛÁö °¡½º´Â Â÷´Ü ¹ëºê(10 ? 30 psi·Î Á¶Àý, ±Ý¼Ó ¹ÐºÀ)¸¦ »ç¿ëÇÏ¿© >99.9995%¿©¾ß ÇÕ´Ï´Ù. 1/4¡È ±Ý¼Ó ¹ÐºÀ ¶óÀÎÀ» ÅëÇØ Áú¼Ò(UHP) ÆÛÁö °¡½º¸¦ µÞ¸éÀÇ 1/4¡È ¾ÐÃà ÇÇÆÿ¡ ¿¬°áÇÕ´Ï´Ù. 1/4ÀÎÄ¡ Æú¸®¿¡Æ¿·» Æ©ºê³ª ±Ý¼Ó ¶óÀÎÀ» ÅëÇØ 90-110psi CDA(±ú²ýÇÏ°í °ÇÁ¶ÇÑ °ø±â)¸¦ ´Ù¸¥ 1/4ÀÎÄ¡ ¾ÐÃà ÇÇÆÿ¡ ¿¬°áÇÕ´Ï´Ù. ÀûÀýÇÑ 1¡È Áø°ø(±Ý¼Ó(SS) ¼±È£) È£½º(KF25), O-¸µ ¹× Ŭ·¥ÇÁ¸¦ »ç¿ëÇÏ¿© ÆßÇÁ¸¦ ºÎÂøÇÕ´Ï´Ù. Áø°ø ÆßÇÁÀÇ ´Ù¸¥ ÂÊ(¹è±â ÂÊ)(* Fomblin°ú °°Àº °úºÒ¼ÒÈ Áø°ø ¿ÀÀÏ ÇÊ¿ä)Àº > 5cfm µå·Î¿ì(1¡È Æ©ºêµµ)°¡ Àִ ǥÁØ ½ÇÇè½Ç ¹è±â ¶Ç´Â ÁöºØÀ¸·Î °¡¾ß ÇÕ´Ï´Ù. 1¹ÌÅͺ¸´Ù Å« °æ¿ì 1.5¡È(NW40)À» »ç¿ëÇØ¾ß ÇÕ´Ï´Ù. ¾ÏÇü VCR ¿¤º¸¿ì¸¦ ÅëÇØ Àü±¸Ã¼¸¦ ºÎÂøÇÕ´Ï´Ù(Ç×»ó »õ °³½ºÅ¶À» »ç¿ëÇϽʽÿÀ). 1/4¡È °³½ºÅ¶ ¸ÕÀú(Àå°© Âø¿ë) Àü±¸Ã¼ ºÎÂø¿¡ ´ëÇؼ´Â ¡°AT200M µµ±¸ ¹× ¼ÒÇÁÆ®¿þ¾î ÀÛµ¿¡±À» ÂüÁ¶ÇϽʽÿÀ. |
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¼ÒÇÁÆ®¿þ¾î |
ÀÚ¼¼ÇÑ ÁöħÀº ÇÁ·¹Á¨Å×ÀÌ¼Ç ¹× ºñµð¿À ÁöħÀÎ " AT200M ¼³Ä¡ ¹× ½ÃÀÛ " À» ÂüÁ¶ÇϽʽÿÀ. 5ÀÎÄ¡ ÅÍÄ¡ ½ºÅ©¸° |
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ALD Systems ComparisonCompare ALD equipment and systems manufacturedAnric Technologies. Compare by size and capability. |
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AT200M |
AT410M/610/810 |
AT650T |
AT650P |
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Desktop (W: ~11¡± (27.9cm) x D: 15¡± (38.1cm) x H: 14.5¡± (36.8cm)) | Desktop (W: 24.5¡± (62.3cm) x D: 24¡± (61cm) x H: 15.75¡± (40.5cm))[610 D: 25¡È (63.5cm)] | Desktop (W: 15¡± (38.1cm) x D: 15¡± (38.1cm) x H: Less that 38¡± (96.5cm)) | Desktop (W: 15¡± (38.1cm) x D: 15¡± (38.1cm) x H: 38¡± (96.5cm)) | |||||
Sample Size = 2 inch (x2) up to 2 x 2 x 2¡± volume | 410 = 4 inch; 610 = 6 inch; 810 = 8 inch | 6 inch | 6 inch | |||||
Thermal to 300¡ÆC | Thermal to 320¡ÆC | Thermal to 400¡ÆC (upgradeable to Plasma) |
Plasma and Thermal to 400¡ÆC |
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One Precursor/One Counter Reactant |
Three Precursors/ Up to Three Counter Reactants |
Four Precursors/Four Counter Reactants |
Four Precursors/Four Counter Reactants |
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Heated Precursor to 150¡ÆC | Heated Precursor to 180¡ÆC (N2 Assist Available) | 3 Precursors to 185¡ÆC (with optional pressure boost) , 1 at RT | 3 Precursors to 185¡ÆC (with optional pressure boost) , 1 at RT | |||||
All stainless steel chamber and metal sealed stainless lines | All aluminum chamber (hot walled) and metal sealed stainless lines | All aluminum chamber (warm walled) and metal sealed stainless lines and chuck | All aluminum chamber (warm walled) and metal sealed stainless lines and chuck | |||||
Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | |||||
Ultrafast MFC | Ultrafast MFC | Up to four ultrafast MFCs | Up to four ultrafast MFCs | |||||
5¡± Display w. Integrated PLC |
7¡° Display with integrated PLC |
10¡° Display with integrated PLC |
10¡° Display with integrated PLC |
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